This SPIE-PW paper by Handel and Morkoç examines 1/f noise in Schottky diodes. The research analyzes low-frequency noise mechanisms in metal-semiconductor Schottky barrier diodes, investigating contributions from barrier height fluctuations, interface states, and quantum 1/f effects, providing theoretical models and experimental correlations for predicting noise performance as functions of metal choice, semiconductor material, interface preparation, and operating conditions, with applications to low-noise mixer and detector design.