This IEEE Electron Device Letters paper by Kayis, Leach, Zhu, Wu, Li, Özgür, Morkoç, Yang, Misra, and Handel examines low-frequency noise measurements of AlGaN/GaN MOS HFETs with HfAlO gate dielectric. The research investigates how hafnium aluminum oxide high-k dielectric affects 1/f noise in metal-oxide-semiconductor heterostructure field-effect transistors, comparing noise performance with conventional Schottky gate devices and analyzing the role of interface traps and dielectric quality in determining noise characteristics relevant to low-noise amplifier applications.