This ISSSR 2010 paper by Handel presents quantum 1/f noise calculations for all-epitaxial metal-semiconductor diodes. The research develops detailed theoretical models and numerical calculations for predicting 1/f noise in Schottky diodes fabricated entirely by epitaxial semiconductor growth techniques, analyzing how quantum noise mechanisms differ from conventional metal-deposited diodes, with applications to optimizing low-noise millimeter-wave and terahertz mixers, detectors, and frequency multipliers for spectroscopic sensing and imaging.