This EXMATEC 2010 paper by Handel presents low frequency noise theory for metal-semiconductor diodes. The research develops comprehensive theoretical framework for understanding 1/f noise in Schottky barrier diodes, analyzing contributions from interface states, barrier height fluctuations, and quantum 1/f mechanisms, providing predictions for noise behavior as functions of bias, temperature, and material parameters, with applications to improving diode design for low-noise mixers, detectors, and power rectifiers in RF and power electronics.