This paper by Pavelka, Tanuma, Tacano, Šikula, and Handel examines low-frequency noise characteristics of InGaAs/InAlAs heterostructures, presented at ICNF 2009. The research investigates 1/f noise in indium-based III-V semiconductor heterostructures used for high-speed electronics and infrared detectors, analyzing contributions from various noise mechanisms including quantum 1/f effects, carrier number fluctuations, and mobility fluctuations, with implications for optimizing material quality and device design for low-noise high-electron-mobility transistors and photodetectors.