This SPIE paper by Handel and Truong investigates 1/f noise in nitride-based spintronic devices. The research examines low-frequency noise in gallium nitride based spin-electronic devices that exploit both charge and spin degrees of freedom for magnetic sensing, data storage, and logic applications, analyzing how quantum 1/f noise affects spin injection efficiency, magnetoresistance fluctuations, and read/write performance in GaN-based spin valves, magnetic tunnel junctions, and spin field-effect transistors relevant to next-generation non-volatile memory and quantum information processing.