This invited SPIE paper by Handel, Morkoç, Sia, and Truong examines piezoelectric quantum 1/f noise in nitride-based heterostructures. The research provides detailed analysis of how piezoelectric coupling in gallium nitride and aluminum gallium nitride heterostructures contributes to quantum 1/f noise through strain-induced polarization fields and phonon interactions, with implications for understanding noise mechanisms in GaN HEMTs, optimizing heterostructure design to minimize noise, and improving performance of GaN-based power amplifiers and RF devices.