This paper by Handel, Morkoç, and Truong discusses use of quantum 1/f noise formulas in the reliability characterization of nitride-based heterostructures, published in SPIE Proceedings on Gallium Nitride Materials and Devices. The research demonstrates how analyzing 1/f noise measurements using quantum noise theory provides insights into defect dynamics, degradation mechanisms, and reliability physics in GaN/AlGaN heterostructure devices, offering non-destructive testing methods for assessing long-term stability and predicting failure modes in high-power electronics and RF amplifiers.