This paper by Handel, Tournier, Hartnagel, Mishra, and York investigates 1/f noise in GaN/AlGaN HFET based oscillators. The research analyzes how low-frequency 1/f noise in gallium nitride transistors upconverts to phase noise in oscillator circuits, affecting the spectral purity and stability of RF signal sources built with GaN technology, providing design guidelines for minimizing phase noise in GaN-based voltage-controlled oscillators, frequency synthesizers, and local oscillators for radar and communications systems.