This WOCSDICE 2004 paper by Handel, Hartnagel, Sia, Mishra, and York examines GaN HEMT geometry and piezoelectric quantum 1/f noise. The research investigates how the physical geometry and structural design of gallium nitride High Electron Mobility Transistors affect piezoelectric-induced quantum 1/f noise, providing insights for optimizing device layout, channel dimensions, and heterostructure configurations to minimize noise while maintaining high-frequency performance in GaN-based RF and power electronics applications.