This paper by Handel and Lin presents 1/f noise measurement and theory in GaN HEFTs (High Electron Mobility Field Effect Transistors) and extends to other devices and systems. The research combines experimental noise measurements with quantum theoretical predictions for gallium nitride based transistors, providing a comprehensive analysis of low-frequency noise sources and their impact on device performance, reliability, and system-level applications in wireless communications, power amplifiers, and high-frequency circuits.