This paper by Sia, Chua, Hartnagel, and Handel examines quantum 1/f noise in epitaxial lateral overgrown (ELO) GaN with particular focus on the piezoelectric effect. The research investigates how piezoelectric coupling in GaN crystal structures contributes to low-frequency 1/f noise, with implications for the design and optimization of GaN-based devices such as high-electron-mobility transistors (HEMTs) and optoelectronic components where noise performance is critical.