This paper discusses expected 1/f noise reduction through moderate irradiation in high-mobility junctionless nanodevices and examines quantum 1/f noise in Resonant Tunneling Diodes (RTDs). The work explores how controlled radiation exposure can modify defect structures to reduce low-frequency noise in nanoscale devices, and analyzes the fundamental quantum mechanical sources of 1/f noise in RTD structures used for high-frequency oscillators and quantum computing applications.